Light Emission and Lasing in Organic Semiconductor-incorporated Perovskite (OSiP)
Letian Dou a b
a Department of Chemistry, Emory University, 1515 Dickey Drive NE, Atlanta, Georgia 30322, USA
b Purdue University, West Lafayette, IN, 47907, USA
Proceedings of Perovskite Semiconductors: From Fundamental Properties to Devices (PerFunPro)
Konstanz, Germany, 2025 September 8th - 10th
Organizers: Lukas Schmidt-Mende, Vladimir Dyakonov and Selina Olthof
Invited Speaker, Letian Dou, presentation 019
Publication date: 9th July 2025

Halide perovskites are exciting new semiconductors that show a great promise in low cost and high-performance optoelectronics devices. However, the poor stability of these materials is limiting their practical use. In this talk, I will present a molecular approach to the synthesis of a new family of hybrid material – Organic Semiconductor-incorporated Perovskite (OSiP), which are structrally more versatile and intrinsically stable. Energy transfer and charge transfer between adjacent organic and inorganic layers are extremely fast and efficient, owing to the atomically flat interface and short interlayer distance. In addition, the rigid conjugated ligand design dramatically enhances their chemical stability, suppresses solid-state ion diffusion, and modulates electron-phonon coupling, making them useful in many applications, particularly solid-state lighting. Using these stable hybrid materials, we demonstrate efficient light emission and amplification in single crystalline nanostructures, epitaxial heterostructures, as well as polycrystalline thin films. 

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