Publication date: 16th July 2025
This work focuses on the determination of defects in perovskite solar cells, a crucial aspect for enhancing device performance and reliability. Capacitance-voltage (C(V)) measurements and Mott-Schottky analysis are often employed to determine doping densities in devices. However, geometric capacitance, which depends inversely on the thickness of the device, makes it impossible to accurately measure charge density in thin-film devices. [1] To overcome this limitation, we investigate single-crystal devices with thicknesses ranging from 20 to 80 µm. Further, we are investigating thin film devices, with a lateral contact arrangement with 100 µm distance between the electrodes. Our methodology incorporates both classical steady-state C(V) and pulsed C(V), which is a new type of measurement that avoids the influence of mobile ions. Additionally, drift diffusion simulations with the software Setfos are employed to find out what could cause a measured charge density in a C(V) measurement. The combination of experiments and simulation helps us to understand how defects and mobile ions impact the overall performance of perovskite solar cells.
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