Visualizing Shallow Trap Distributions in Metal-Halide Perovskites via Low-Temperature Transient Photoluminescence
Guus Aalbers a, Willemijn Remmerswaal a, Martijn Wienk a, René Janssen a
a Molecular Materials and Nanosystems, Institute for Complex Molecular Systems, Eindhoven University of Technology, The Netherlands
Proceedings of Perovskite Semiconductors: From Fundamental Properties to Devices (PerFunPro)
Konstanz, Germany, 2025 September 8th - 10th
Organizers: Lukas Schmidt-Mende, Vladimir Dyakonov and Selina Olthof
Oral, Guus Aalbers, presentation 022
Publication date: 16th July 2025

Mixed-halide perovskite materials are exceptional candidates for multijunction solar cells to surpass the detailed-balance limit. However, perovskite solar cells (PSC) still suffer performance losses due to nonradiative charge recombination, which is induced by electronic defects (traps). A common technique to assess nonradiative losses in semiconductors is photoluminescence (PL) spectroscopy. Using transient PL (tr-PL) measurements, we study the time-resolved recombination decay, providing insight into charge recombination kinetics. In metal-halide perovskites, these transients exhibit extremely long decay times dominated by trapping and de-trapping at shallow defects. [1]

Here, we investigate shallow defects in metal-halide perovskite partial solar cell stacks and examine how surface treatments modify their energy and density using low-temperature transient PL spectroscopy. At lower temperatures, PL decay is dominated by radiative recombination, with longer decay times suggesting reduced nonradiative losses. Fitting the temperature-dependent tr-PL indicates that, upon cooling, shallow traps appear less deep and eventually merge into the valence or conduction band. From these low-temperature transients, we extract activation energies and construct a shallow trap density of states (tDOS), visualizing defect distributions within the perovskite film. We extend this approach to films treated with choline chloride, fullerene C60, and choline chloride combined with C60, showing that these treatments alter the shallow tDOS and energy compared to untreated films, demonstrating that surface treatments influence shallow as well as deep defects.

Our results show that low-temperature tr-PL enables experimental probing of shallow defect densities and energies, providing a better understanding of shallow defects in metal-halide perovskite films and informing passivation strategies and charge transport layer design for higher-efficiency PSCs.

The authors acknowledge funding from the Dutch Research Council (NWO) (Spinoza grant) and the European Research Council (Grant Agreement No. 101098168).

© FUNDACIO DE LA COMUNITAT VALENCIANA SCITO
We use our own and third party cookies for analysing and measuring usage of our website to improve our services. If you continue browsing, we consider accepting its use. You can check our Cookies Policy in which you will also find how to configure your web browser for the use of cookies. More info