Publication date: 16th July 2025
Perovskites have shown a high potential for their implementation in both monolithic and multijunction solar cells. Due to the tunability of their bandgap, as well as current matching capabilities, they are a good match as high bandgap material in combination with crystalline silicon. Despite the promising power conversion efficiencies (PCE) reached for the current state of the art, degradation and defects due to interfaces are still a challenge for potential commercialization. A deep understanding of the defect mechanisms therefore plays a crucial role. A powerful method to probe defect densities and activation energies for holes and electrons separately, is given by using a metal-insulator-semiconductor (MIS) setup for thermally stimulated current (TSC) measurements, where the trap filling is achieved using electrical pumping. In comparison to classical TSC measurements this approach 1. mitigates recombination and 2. doesn't rely on the use of diode-like samples to probe the individual charge carriers, allowing a unipolar evaluation for both electron- and hole-type traps using the same sample, and thus lowering the impact of unwanted interface effects on the signal interpretation [1].
Here, we report the results of charge carrier selective MIS TSC measurements on state-of-the-art triple-cation mixed halide (TCMH) perovskites with a bandgap of 1.68 eV, suitable for inverted (p-i-n) structured perovskite solar cells (PSCs) for potential use in a Si tandem configuration. The MIS TSC measurements were done using TCMH perovskite thin films enabling PSCs with a PCE of up to 19.6% for film thicknesses of one micrometer [2]. The measurements unveil the activation energies of different defects for both, electrons and holes, for bulk and surface states in the pristine perovskite. Furthermore, the effect of degradation is investigated. For this, samples are stored under different conditions to gain insight into their respective influence. The storing conditions for this experiment are ambient, both under natural light illumination and without, under the same type of illumination using protective nitrogen atmosphere and in a glovebox environment. The results for the measurements show the effect of the respective influence by the evolution of defect densities and activation energies.
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