Publication date: 16th July 2025
Mixed lead-tin halide perovskite solar cells (PSCs) represent a key-component in the development of all-perovskite tandems. In previous work, we have highlighted the significant role of interfacial losses on the performance of these devices. While lead-based PSCs have seen substantial progress in the development of new hole transport layers (HTLs) in recent years, advances in HTLs for mixed lead-tin PSCs remain scarce. To date, most lead-tin-based PSCs still rely on PEDOT:PSS as HTL, which is known for its hygroscopic and acidic nature, that compromise long-term stability.
In this work, we introduce a novel, PEDOT:PSS-free HTL by employing a porous aluminum oxide (Al₂O₃) layer fabricated via atomic layer deposition (ALD).
Our approach centers on the morphological control of insulating Al₂O₃ thin films utilizing self-organized silver layers for patterning the Al2O3 in a lift-off process. By tuning the thickness of the vapor-deposited silver layer and the post-annealing conditions, we can control the resulting size and distribution of nanoscale pores in the oxide layer, that allow direct contact of the perovskite with the hole extraction electrode. Specifically, we can tune the Al₂O₃ surface coverage from 10 % to 70 % and the pore size between 50 nm and 500 nm on indium tin oxide (ITO) substrates. Finally, we applied this point-contact strategy to mixed lead-tin perovskite solar cells on ITO without the use of any additional hole transport materials. The resulting devices demonstrate performance levels comparable to those based on PEDOT:PSS. Our findings position ALD-grown Al₂O₃ point-contact layers as a promising, chemically inert, and scalable alternative to conventional HTLs in lead-tin perovskite solar cell architectures.
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