Publication date: 16th July 2025
Lead-halide perovskites have attracted considerable interest in the field of optoelectronics due to their exceptional performance characteristics and cost-effective fabrication methods. Their seeded nucleation and controlled growth in thin films is highly interesting, enabling the creation of uniform layers with minimal defects and grains in specific locations relative to an eventual circuit structure. However, relatively little is known about the nucleation and growth kinetics within systems like these.
Herein, we present a study of slow, seeded growth of perovskite thin films under the influence of a methylamine (MA) treatment. Through precise control of the crystallization conditions, high-quality perovskite films with up to millimeter-sized grains can be fabricated. Nucleation density and position can be controlled through artificial gold seeds, lithographically placed on the substrate before perovskite deposition.
The maximum distance of such seeds and, hence, the maximum achievable grain size is dependent on the number of grains nucleating beyond the predetermined spots.
To thoroughly understand the behavior of such systems, we utilize a phase-field model and create an analytical model that accurately describes the relationship between the number of 'rogue' nuclei and the distance between artificial seeds.
The crystallization behavior of three different substrate/perovskite combinations, using two different perovskite compositions, is analyzed, and the number of excess nucleation centers is extracted. Both the simulation results and the analytical model match the experimental results remarkably well, validating the accuracy of our models. We emphasize the generality of our results, as neither model depends on specific material properties, but operates effectively with the nucleation density of the system as their single input parameter.
We acknowledge SPP2196 Project (Deutsche Forschungsgemeinschaft, DFG) for funding.
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