Publication date: 16th July 2025
On the path toward more efficient perovskite solar cells, identifying and understanding loss mechanisms remains essential. Time-resolved techniques such as transient photoluminescence (trPL) and transient surface photovoltage (trSPV) are commonly used to characterize buried interfaces and reveal charge carrier dynamics within multilayer device stacks. However, interpreting these measurements remains significantly challenging due to the complexity of the underlying processes.
The differential lifetime (τdiff) has become a widely used and model-independent method for analyzing trPL data by evaluating the time derivative of the logarithmically transformed decaying signal1. While this approach has proven effective for trPL, there are no reports of its application to trSPV or any other time-resolved signals.
Although the same calculation works well for the trSPV decay, applying the τdiff method to ascending signals requires a slight modification in the calculation. Using a simple biexponential model, we demonstrate that the modified formula accurately retrieves the time constants out of the rising signal.
While heuristic rate-equation-based models can effectively fit transients2,3, they often lack a solid physical base and neglect key electrostatic considerations such as Poisson’s equation. To resolve this, we employ drift-diffusion simulations utilizing SIMsalabim4 and provide a physically consistent interpretation of the τdiff plateaus, correlating them directly to the underlying carrier dynamics.
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