Publication date: 16th July 2025
Solution-processed perovskites have emerged as compelling materials for low-cost light-emitting diodes (LEDs) due to their high emissivity and excellent charge transport properties [1]. However, the long-term operational stability of perovskite LEDs continues to hinder their practical deployment [2]. In this work, we demonstrate near-infrared FAPbI3 perovskite LEDs with enhanced efficiency and significantly improved stability under ambient conditions by employing surface passivation using a thiol-based salt, 2-diethylaminoethanethiol hydrochloride (DEAET). DEAET contains both a thiol (-SH) group and a tertiary amine, offering multifunctional interaction capability. This dual-functional nature makes it particularly suitable for mitigating the negative effects of residual formamidinium iodide (FAI) on the perovskite surface. By binding to surface defects and suppressing non-radiative recombination, DEAET passivation leads to a notable increase in photoluminescence quantum yield (PLQY) from 10% to 30%, while device efficiency improves from 7% to 14%. Furthermore, these passivated devices exhibit excellent stability over 15 days in ambient air (~40% relative humidity), in stark contrast to control devices, which degrade significantly within 48 hours. These findings underscore the potential of thiol-based interface engineering for enabling both high efficiency and long-term stability in perovskite optoelectronic devices.
The research work was supported by the European Research Council (ERC) through Consolidator Grant (818615-MIX2FIX). We acknowledge the financial support from Hellenic Foundation for Research and Innovation (HFRI) under the 5th Call for HFRI PhD Fellowships (Fellowship Number:19304.)
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