Publication date: 16th July 2025
Interfacial defects at the buried junction between the electron transport layer (ETL) and the perovskite absorber critically limit the performance and stability of perovskite solar cells (PSCs).1 In this work, we introduce a CdS quantum dot (QD) interlayer, deposited onto SnO₂ using a successive ionic layer adsorption and reaction (SILAR) method, as a targeted strategy for interfacial passivation. The incorporation of CdS QDs significantly reduces surface oxygen vacancies and hydroxyl groups on SnO₂, as confirmed by X-ray photoelectron spectroscopy (XPS), while Kelvin probe force microscopy (KPFM) reveals enhanced surface potential uniformity and improved charge distribution. Perovskite films grown on CdS-treated SnO₂ exhibit larger grain sizes and reduced photoluminescence (PL) intensity, indicating more efficient charge extraction. Time-resolved PL measurements demonstrate a substantial enhancement in electron transfer rate—from ~1 ns⁻¹ to ~14 ns⁻¹—while ultraviolet photoelectron spectroscopy (UPS) shows improved energy level alignment at the interface. Impedance spectroscopy reveals reduced interfacial recombination and improved charge transport properties in the CdS-passivated devices. Furthermore, stability tests under continuous illumination (light soaking) and under the ISOS-D-1 protocol demonstrate enhanced operational durability. These findings highlight the critical role of QD-based interfacial engineering in modulating charge dynamics, suppressing recombination, and advancing both performance and long-term stability of PSCs.
We acknowledge FAPESP for the financial support under grants 2024/05914-5, 2023/10395-4, and 2017/11986-5, as well as Shell and the strategic importance of the support provided by ANP (Brazil’s National Oil, Natural Gas, and Biofuels Agency).
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