Metal halide perovskites have emerged as leading candidates for next‑generation photovoltaics, yet their long‑term stability remains a barrier to commercialization. In‑situ characterization and post‑mortem analyses during accelerated ageing tests have been instrumental in uncovering the dominant degradation pathways. Building on these insights, recent advances in perovskite bulk chemistry, interfacial design, charge‑transport layers, and encapsulation strategies have enabled degradation mitigation and enhanced device durability. At the absorber level, additive engineering, through crystallization agents, has significantly reduced defect densities, suppressed ion migration and hence, prolonged devices’ longevity. Meanwhile, parallel efforts towards fully inorganic 3D perovskites, low‑ionic (non-alloyed) compositions, and solvent-free deposition routes such as vacuum processing have further strengthened intrinsic material stability. Interface engineering using hydrophobic molecular passivants, metal oxides, or 2D perovskite layers has proven effective in shielding the absorber from environmental stressors. Furthermore, implementation of inorganic metal‑oxide transport layers and the optimization of self‑assembled monolayers has reduced contact‑induced degradation. Finally, novel encapsulation strategies are enabling improved operational stability under real‑world outdoor conditions of perovskite solar cells. Within this context, #PeroStability will highlight technological developments and fundamental scientific insights, supported by advanced characterizations, thereby establishing a framework for assessing recent progress in perovskite stability and identifying the next steps toward commercialization.
- Microstructural defects
- Phase segregation & ion migration
- In-situ characterization and post-mortem analysis
- Molecular engineering for perovskite bulk and interfaces
- Precursor ink chemistry
- Two-dimensional (2D) perovskites
- Stable charge transport layers
- Encapsulation materials
- Accelerated ageing tests

